Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics

Title
Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics
Authors
곽준영노기창송찬우김태수강민수송화영함아영조민경조서린채현준조성래조기원박정원송승우송인택방성환강기범
Keywords
2D layered materials; growth; target-oriented growth technique; interlayer engineering; intercalation; electronics; quantum emitter; neuromorphic device
Issue Date
2020-12
Publisher
ACS Nano
Citation
VOL 14, NO 12-16300
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host?intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
URI
http://pubs.kist.re.kr/handle/201004/72703
ISSN
1936-0851
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE