A 2D material-based floating gate device with linear synaptic weight update

Title
A 2D material-based floating gate device with linear synaptic weight update
Authors
박종극김인호이수연김재욱곽준영김인수박종길정연주김민경박은표김태수김규태장지원강기범
Keywords
Synaptic weight; Linear update; Flash memory; Floating Gate; 2D material
Issue Date
2020-12
Publisher
Nanoscale
Citation
VOL 12, NO 48-24509
Abstract
Neuromorphic computing is of great interest among researchers interested in overcoming the von Neumann computing bottleneck. A synaptic device, one of the key components to realize a neuromorphic system, has a weight that indicates the strength of the connection between two neurons, and updating this weight must have linear and symmetric characteristics. Especially, a transistor-type device has a gate terminal, separating the processes of reading and updating the conductivity, used as a synaptic weight to prevent sneak path current issues during synaptic operations. In this study, we fabricate a top-gated flash memory device based on two-dimensional (2D) materials, MoS2 and graphene, as a channel and a floating gate, respectively, and Al2O3 and HfO2 to increase the tunneling efficiency. We demonstrate the linear weight updates and repeatable characteristics of applying negative/positive pulses, and also emulate spike timing-dependent plasticity (STDP), one of the learning rules in a spiking neural network (SNN).
URI
http://pubs.kist.re.kr/handle/201004/72704
ISSN
2040-3364
Appears in Collections:
KIST Publication > Article
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