A 2D material-based floating gate device with linear synaptic weight update
- A 2D material-based floating gate device with linear synaptic weight update
- 박종극; 김인호; 이수연; 김재욱; 곽준영; 김인수; 박종길; 정연주; 김민경; 박은표; 김태수; 김규태; 장지원; 강기범
- Synaptic weight; Linear update; Flash memory; Floating Gate; 2D material
- Issue Date
- VOL 12, NO 48-24509
- Neuromorphic computing is of great interest among researchers interested in overcoming the von Neumann computing bottleneck. A synaptic device, one of the key components to realize a neuromorphic system, has a weight that indicates the strength of the connection between two neurons, and updating this weight must have linear and symmetric characteristics. Especially, a transistor-type device has a gate terminal, separating the processes of reading and updating the conductivity, used as a synaptic weight to prevent sneak path current issues during synaptic operations. In this study, we fabricate a top-gated flash memory device based on two-dimensional (2D) materials, MoS2 and graphene, as a channel and a floating gate, respectively, and Al2O3 and HfO2 to increase the tunneling efficiency. We demonstrate the linear weight updates and repeatable characteristics of applying negative/positive pulses, and also emulate spike timing-dependent plasticity (STDP), one of the learning rules in a spiking neural network (SNN).
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