Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition

Title
Doping-Free All PtSe2 Transistor via Thickness-Modulated Phase Transition
Authors
곽준영김민경박은표Tanmoy Das양은영서재은김정현서동욱장지원
Keywords
platinum diselenide; semiconductor-to-metal phase transition; van der Waals contact; contact resistance; Schottky barrier height
Issue Date
2021-01
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 13, NO 1-1871
Abstract
Achieving a high-quality metal contact on two-dimensional (2D) semiconductors still remains a major challenge due to the strong Fermi level pinning and the absence of an effective doping method. Here, we demonstrate high performance “all-PtSe2” field-effect transistors (FETs) completely free from those issues, enabled by the vertical integration of a metallic thick PtSe2 source/drain onto the semiconducting ultrathin PtSe2 channel. Owing to its inherent thickness-dependent semiconductor-to-metal phase transition, the transferred metallic PtSe2 transforms the underlying semiconducting PtSe2 into metal at the junction. Therefore, a fully metallized source/drain and semiconducting channel could be realized within the same PtSe2 platform. The ultrathin PtSe2 FETs with PtSe2 vdW contact exhibits excellent gate tunability, superior mobility, and high ON current accompanied by one order lower contact resistance compared to conventional Ti/Au contact FETs. Our work provides a new device paradigm with a low resistance PtSe2 vdW contact which can overcome a fundamental bottleneck in 2D nanoelectronics.
URI
http://pubs.kist.re.kr/handle/201004/72727
ISSN
1944-8244
Appears in Collections:
KIST Publication > Article
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