Comparative Study of Metamorphic InAs Layers Grown on GaAs and Si for Mid-Infrared Photodetectors

Title
Comparative Study of Metamorphic InAs Layers Grown on GaAs and Si for Mid-Infrared Photodetectors
Authors
최원준한재훈정대환강수석류근환라파엘 추
Issue Date
2021-02
Publisher
Solid-state electronics
Citation
VOL 176, 107942
Abstract
We report a comparative study of metamorphic InAs p-i-n photodetectors epitaxially grown on GaAs and Si by molecular beam epitaxy. Linearly graded InAlAs buffers were employed to bridge the high lattice mismatch between InAs and Si. Quantitative measurement for threading dislocation density (TDD) in the InAs layers grown on GaAs and Si has been performed using transmission electron microscopy and electron channeling contrast imaging, both of which revealed that the TDD of InAs/Si sample is ~35% higher than that of GaAs sample. Comparison of fabricated InAs p-i-n photodetectors indicated that reduction of threading dislocation density is crucial for low dark current and high responsivity mid-infrared photodetectors on Si.
URI
http://pubs.kist.re.kr/handle/201004/72871
ISSN
0038-1101
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