Frequency Doubler and Universal Logic Gate Based on Two- Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption

Title
Frequency Doubler and Universal Logic Gate Based on Two- Dimensional Transition Metal Dichalcogenide Transistors with Low Power Consumption
Authors
황도경김태욱안종태나현수장지수Takashi TaniguchiKenji Watanabe심재원이영택
Keywords
2D semiconductor; complementary circuit; frequency doubler; single inversion AND logic gate; low power consumption
Issue Date
2021-02
Publisher
ACS Applied Materials & Interfaces
Citation
VOL 13, NO 6-7475
Abstract
Two-dimensional transition metal dichalcogenide semiconductors are very promising candidates for future electronic applications with low power consumption due to a low leakage current and high on?off current ratio. In this study, we suggest a complementary circuit consisting of ambipolar WSe2 and n-MoS2 field-effect transistors (FETs), which demonstrate dual functions of a frequency doubler and single inversion AND (SAND) logic gate. In order to reduce the power consumption, a high-quality thin h-BN single crystal is used as a gate dielectric that leads to a low operating voltage of less than 5 V. By combining the low operating voltage with a low operating current in the complementary circuit, a low power consumption of 300 nW (a minimum of 10 pW) has been achieved, which is a significant improvement compared to the tens of μW consumed by a graphene channel. The complementary circuit shows the effective frequency doubling of the input with a dynamic range from 20 to 100 Hz. Furthermore, this circuit satisfies all the truth tables of a SAND logic gate that can be used as a universal logic gate like NAND. Considering that the NAND logic gate generally consists of four transistors, it is significantly advantageous to implement the equivalent circuit SAND logic gate with only two FETs. Our results open up possibilities for analog- and logic-circuit applications based on low-dimensional semiconductors.
URI
http://pubs.kist.re.kr/handle/201004/72906
ISSN
1944-8244
Appears in Collections:
KIST Publication > Article
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