Reconfigurable thin-film transistors based on a parallel array of Si-nanowires

Title
Reconfigurable thin-film transistors based on a parallel array of Si-nanowires
Authors
전대영So Jeong ParkSebastian PreglThomas MikolajickWalter M. Weber
Keywords
Si nanowire; Reconfigurable thin-film transistors; ambipolar transistors; Schottky-barrier; current?voltage contour map
Issue Date
2021-03
Publisher
Journal of applied physics
Citation
VOL 129, 124504
Abstract
The implementation of advanced electronic devices in the fourth industrial revolution era can be achieved with bottom-up grown silicon nanowire (Si-NW) based transistors. Here, we have fabricated reconfigurable Schottky-barrier (SB) thin-film transistors (TFTs) consisting of a parallel array of bottom-up grown single-crystalline Si-NWs and investigated in detail their device length dependent electrical performance and transport mechanism with current?voltage transport-map, key electrical parameters, and numerical simulation. In particular, the effective extension length (Lext_eff) limited significantly the overall conduction behavior of reconfigurable Si-NW SB-TFTs, such as ambipolarity, mobility, threshold voltage, and series resistance. This work provides important information for a better understanding of the physical operation of reconfigurable transistors with SB contacts and further optimization of their performance for implementing practical applications.
URI
http://pubs.kist.re.kr/handle/201004/72984
ISSN
0021-8979
Appears in Collections:
KIST Publication > Article
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