High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb

Title
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
Authors
송진동황도경김성근한재훈강수석SANG-HYEON KIM노일표DAE-MYEONG GEUMSEONG KWANG KIM이우철YUN HEUB SONG
Keywords
p-MOSFET; GaSb; MBE; AlGaSb
Issue Date
2021-01
Publisher
IEEE Journal of the Electron Devices Society
Citation
VOL 9-48
Abstract
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al 0.95 Ga 0.0 5 Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In 0.53 Ga 0.47 As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility ( μeff ) characteristics. As a result, the fabricated devices showed the lowest off-leakage current ( Ioff ), subthreshold slope ( S . S .) and high μeff among reported GaSb p-MOSFETs.
URI
http://pubs.kist.re.kr/handle/201004/73075
ISSN
2168-6734
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KIST Publication > Article
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