Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors

Title
Channel geometry-dependent threshold voltage and transconductance degradation in gate-all-around nanosheet junctionless transistors
Authors
전대영
Keywords
Junctionless transistors; Channel geometry; Threshold voltage; Transconductance; Gate-all-around nanosheet
Issue Date
2021-05
Publisher
AIP advances
Citation
VOL 11, 055111
Abstract
The gate-all-around (GAA) nanosheet (NS) junctionless transistor (JLT) is an attractive candidate for advanced technology nodes in CMOS scaling. Here, the channel width-dependent transconductance (gm) degradation and threshold voltage (Vth) shift of GAA NS JLTs were investigated via numerical simulation. Compared to bulk neutral channels, a pronounced surface accumulation channel limited the overall electrical characteristics of GAA NS JLTs at narrow widths. Additionally, the variation in Vth of GAA NS JLTs was much smaller than that in tri-gate JLTs. Quantum mechanical effects in GAA NS JLTs with a very narrow width were also investigated.
URI
http://pubs.kist.re.kr/handle/201004/73126
ISSN
2158-3226
Appears in Collections:
KIST Publication > Article
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