Impact of Channel Length on the Operation Junctionless Transistors With Substrate Biasing
- Impact of Channel Length on the Operation Junctionless Transistors With Substrate Biasing
- 전대영; Mireille Mouis; Sylvain Barraud; Gerard Ghibaudo
- Channel-length dependence; electrical parameters modulated by substrate bias; junctionless transistors (JLTs); series resistance (Rsd); substrate-biasing effect
- Issue Date
- IEEE transactions on electron devices
- VOL 68, NO 6-3073
- Junctionless transistors (JLTs) have promising advantages such as structural simplicity without p-n-junctions and bulk conduction-based operation for the realization of advanced complementary metal oxide semiconductor (CMOS) technologies. Here the channel-length dependence on the operation of JLTs with substrate biasing (Vgb) was investigated in detail. Parasitic series resistance (Rsd) noticeably decreased as Vgb increased. In addition, transconductance (gm), its derivative (dgm/dVgf), and ONdrain current (ION) in a short-channel JLT were significantly affected by the Vgb-modulated Rsd with charge coupling
effects. This work provides important information for better understanding and true estimation of intrinsic JLT performance, for practical applications based on polycrystalline Si, III？V semiconductors, and transition metal dichalcogenides (TMDs) nano-materials as well as advanced logic devices.
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