Impact of Channel Length on the Operation Junctionless Transistors With Substrate Biasing

Title
Impact of Channel Length on the Operation Junctionless Transistors With Substrate Biasing
Authors
전대영Mireille MouisSylvain BarraudGerard Ghibaudo
Keywords
Channel-length dependence; electrical parameters modulated by substrate bias; junctionless transistors (JLTs); series resistance (Rsd); substrate-biasing effect
Issue Date
2021-06
Publisher
IEEE transactions on electron devices
Citation
VOL 68, NO 6-3073
Abstract
Junctionless transistors (JLTs) have promising advantages such as structural simplicity without p-n-junctions and bulk conduction-based operation for the realization of advanced complementary metal oxide semiconductor (CMOS) technologies. Here the channel-length dependence on the operation of JLTs with substrate biasing (Vgb) was investigated in detail. Parasitic series resistance (Rsd) noticeably decreased as Vgb increased. In addition, transconductance (gm), its derivative (dgm/dVgf), and ONdrain current (ION) in a short-channel JLT were significantly affected by the Vgb-modulated Rsd with charge coupling effects. This work provides important information for better understanding and true estimation of intrinsic JLT performance, for practical applications based on polycrystalline Si, III?V semiconductors, and transition metal dichalcogenides (TMDs) nano-materials as well as advanced logic devices.
URI
http://pubs.kist.re.kr/handle/201004/73143
ISSN
0018-9383
Appears in Collections:
KIST Publication > Article
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