Enhanced Ion/Ioff ratio of multi-layer MoS2 field-effect transistors treated by reactive ion etching process

Title
Enhanced Ion/Ioff ratio of multi-layer MoS2 field-effect transistors treated by reactive ion etching process
Authors
이동수전대영박민정원준이창우박창선
Keywords
semiconducting 2-D TMDs materials; MoS2 FETs; reactive ion etching with CF4 plasma; controlled channel-thickness; Ion/Ioff ratio
Issue Date
2021-07
Publisher
한국전기전자재료학회
URI
http://pubs.kist.re.kr/handle/201004/73384
ISSN
-
Appears in Collections:
KIST Publication > Conference Paper
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