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dc.contributor.author이동수-
dc.contributor.author전대영-
dc.contributor.author박민-
dc.contributor.author정원준-
dc.contributor.author이창우-
dc.contributor.author박창선-
dc.date.accessioned2021-07-06T15:30:01Z-
dc.date.available2021-07-06T15:30:01Z-
dc.date.issued2021-07-
dc.identifier.issn--
dc.identifier.other57067-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/73384-
dc.publisher한국전기전자재료학회-
dc.subjectsemiconducting 2-D TMDs materials-
dc.subjectMoS2 FETs-
dc.subjectreactive ion etching with CF4 plasma-
dc.subjectcontrolled channel-thickness-
dc.subjectIon/Ioff ratio-
dc.titleEnhanced Ion/Ioff ratio of multi-layer MoS2 field-effect transistors treated by reactive ion etching process-
dc.typeConference Paper-
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KIST Publication > Conference Paper
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