Temperature-dependent electronic ground state charge transfer in van der Waals heterostructures
- Temperature-dependent electronic ground state charge transfer in van der Waals heterostructures
- 박수형; Haiyuan Wang; Thorsten Schultz; Dongguen Shin; Ruslan Ovsyannikov; Marios Zacharias; Dmitrii Maksimov; Matthias Meissner; Yuri Hasegawa; Takuma Yamaguchi; Satoshi Kera; Areej Aljarb; Mariam Hakami; Lain-Jong Li; Vincent Tung; Patrick Amsalem; Mariana Rossi; Norbert Koch
- van der Waals Heterostructur; PES
- Issue Date
- Advanced materials
- VOL 온라인게재, 2008677
- Electronic charge rearrangement between components of a heterostructure is the fundamental principle to reach the electronic ground state. It is acknowledged that the density of state distribution of the components governs the amount of charge transfer, but a notable dependence on temperature is not yet considered, particularly for weakly interacting systems. Here, it is experimentally observed that the amount of ground-state charge transfer in a van der Waals heterostructure formed by monolayer MoS2 sandwiched between graphite and a molecular electron acceptor layer increases by a factor of 3 when going from 7 K to room temperature. State-of-the-art electronic structure calculations of the full heterostructure that accounts for nuclear thermal fluctuations reveal intracomponent electron？phonon coupling and intercomponent electronic coupling as the key factors determining the amount of charge transfer. This conclusion is rationalized by a model applicable to multicomponent van der Waals heterostructures.
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