Evolution of defect formation during atomically precise desulfurization of monolayer MoS2
- Evolution of defect formation during atomically precise desulfurization of monolayer MoS2
- 손장엽; 이종영; 김종훈; 정연준; 신준철; 이양진; 김관표; 김남원; Arend M. van der Zande; 이관형
- MoS2; Hydrogen plasma; Desulfurization; Defect
- Issue Date
- Communications Materials
- VOL 2, NO 80-10
- Structural symmetry-breaking is a key strategy to modify the physical and chemical properties of two-dimensional transition metal dichalcogenides. However, little is known about defect formation during this process. Here, with atomic-scale microscopy, we investigate the evolution of defect formation in monolayer MoS2 exposed indirectly to hydrogen plasma. At the beginning of the treatment only top-layer sulfur atoms are removed, while vacancies and the molybdenum atomic layer are maintained. As processing continues, hexagonal-shaped nanocracks are generated along the zigzag edge during relaxation of defect-induced strain. As defect density increases, both photoluminescence and conductivity of MoS2 gradually decreases. Furthermore, MoS2 showed increased friction by 50% due to defect-induced contact stiffness. Our study reveals the details of defect formation during the desulfurization of MoS2 and helps to design the symmetry-breaking transition metal dichalcogenides, which is of relevance for applications including photocatalyst for water splitting, and Janus heterostructures.
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