A highly controllable doping technique via interdiffusion between epitaxial germanium layers and GaAs

Title
A highly controllable doping technique via interdiffusion between epitaxial germanium layers and GaAs
Authors
구현철김형준주건우김승환김한성이기영정명호
Keywords
Germanium; Doping; Diffusion; SIMS; Annealing; Electrical properties
Issue Date
2021-08
Publisher
Surfaces and Interfaces
Citation
VOL 26, 101390
URI
http://pubs.kist.re.kr/handle/201004/73628
ISSN
2468-0230
Appears in Collections:
KIST Publication > Article
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