Full metadata record

DC FieldValueLanguage
dc.contributor.author강광남-
dc.contributor.author우덕하-
dc.contributor.authorD. S. Kim-
dc.contributor.authorH. S. Ko-
dc.contributor.authorY. M. Kim-
dc.contributor.authorS. J. Rhee-
dc.contributor.authorS. C. Hong-
dc.contributor.authorY. H. Yee-
dc.contributor.authorW. S. Kim-
dc.contributor.authorJ. C. Woo-
dc.contributor.authorH. J. Choi-
dc.contributor.authorJ. Ihm-
dc.date.accessioned2015-12-02T02:55:24Z-
dc.date.available2015-12-02T02:55:24Z-
dc.date.issued199601-
dc.identifier.citationv. 54, no. 20, 14580-14588-
dc.identifier.other5809-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/7654-
dc.publisherPhys. rev. B-
dc.subjectpercolation of carriers-
dc.titlePercolation of carriers through low potential channels in thick Al//xGa//1//-//xAs (x<0.35) barriers.-
dc.typeArticle-
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE