Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.

Title
Enhanced of lateral growth rate during MOCVD growth on patterned GaAs substrates with CBr//4.
Authors
손창식황성민김성일황성민김무성민석기김은규김용
Keywords
lateral growth
Issue Date
1996-01
Publisher
Proceedings of the microprocess '96
Citation
, 166-169
URI
http://pubs.kist.re.kr/handle/201004/7677
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE