Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.

Title
Carbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.
Authors
손창식민병돈박만장황성민김성일김무성민석기
Keywords
carbon
Issue Date
1996-01
Publisher
Proceedings of the 3rd Korean conference on semiconductors
Citation
, 77-78
URI
http://pubs.kist.re.kr/handle/201004/7700
Appears in Collections:
KIST Publication > Conference Paper
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