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dc.contributor.author손창식-
dc.contributor.author민병돈-
dc.contributor.author박만장-
dc.contributor.author황성민-
dc.contributor.author김성일-
dc.contributor.author김무성-
dc.contributor.author민석기-
dc.date.accessioned2015-12-02T02:55:53Z-
dc.date.available2015-12-02T02:55:53Z-
dc.date.issued199601-
dc.identifier.citation, 77-78-
dc.identifier.other5501-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/7700-
dc.publisherProceedings of the 3rd Korean conference on semiconductors-
dc.subjectcarbon-
dc.titleCarbon doping characteristics of GaAs epilayers grown by MOCVD on GaAs substrates with various crystal orientations.-
dc.typeConference Paper-
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KIST Publication > Conference Paper
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