Enhanced disordering of GaAs/AlGaAs multi quantum well by rapid thermal annealing using plasma enhanced chemical vapor deposition SiN capped layer grown at high RF power conditoin.

Title
Enhanced disordering of GaAs/AlGaAs multi quantum well by rapid thermal annealing using plasma enhanced chemical vapor deposition SiN capped layer grown at high RF power conditoin.
Authors
김용최원준이정일한일기강광남박홍이조규만
Keywords
disordering
Issue Date
1994-03
Publisher
Journal of material science letters
Citation
v. 13, 326-?
URI
http://pubs.kist.re.kr/handle/201004/7759
Appears in Collections:
KIST Publication > Article
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