Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer
- Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer
- 한일기; 허두창; 최원준; 이정일
- laser diodes; multi-quantum well(MQW); high p-doping; light-current; characteristic temperature
- Issue Date
- Proceedings of SPIE : Materials and Devices for Optical and Wireless Communications
- VOL 4905, 527-532
- Appears in Collections:
- KIST Publication > Conference Paper
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