Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer

Title
Study on the light-current characteristics of 1.55 um InGaAsP/InP MQW-LD with highly p-doped InGaAsP/InP layer
Authors
한일기허두창최원준이정일
Keywords
laser diodes; multi-quantum well(MQW); high p-doping; light-current; characteristic temperature
Issue Date
2002-10
Publisher
Proceedings of SPIE : Materials and Devices for Optical and Wireless Communications
Citation
VOL 4905, 527-532
URI
http://pubs.kist.re.kr/handle/201004/7779
ISSN
0277-786X
Appears in Collections:
KIST Publication > Conference Paper
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