Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapor deposition.

Title
Growth of γ-Al2O3 thin films on silicon by low pressure metal-organic chemical vapor deposition.
Authors
이정일S. S. YomW. N. KangY. S. YoonD. J. ChoiT. W. KimK. Y. SeoP. H. HurC. Y. Kim
Keywords
Si; MOCVD; aluminum oxide
Issue Date
1992-01
Publisher
Thin solid films
Citation
VOL 213, 72-?
URI
http://pubs.kist.re.kr/handle/201004/7817
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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