Effect of Cl/H input ratio on the growth rate of MoSi₂ coatings formed by chemical vapor deposition of Si on Mo substrates from SiCl₄H₂ precursor gases

Title
Effect of Cl/H input ratio on the growth rate of MoSi₂ coatings formed by chemical vapor deposition of Si on Mo substrates from SiCl₄H₂ precursor gases
Authors
윤진국김긍호변지영이종권윤호상홍경태
Keywords
etching effect; Si chemical vapor deposition (CVD); growth rate; MoSi₂ coating; molybdenum
Issue Date
2003-07
Publisher
Surface and Coatings Technology
Citation
VOL 172, 176-183
URI
http://pubs.kist.re.kr/handle/201004/7832
ISSN
0257-8972
Appears in Collections:
KIST Publication > Article
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