Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs

Title
Growth of ultrahigh carbon-doped InGaAs and its application to InP/InGaAs(C) HBTs
Authors
한재천송종인박성웅우덕하
Keywords
HBT
Issue Date
2002-01
Publisher
IEEE Transactions on Electron Devices
Citation
VOL 49, NO 1, 1-6
URI
http://pubs.kist.re.kr/handle/201004/7843
ISSN
0018-9383
Appears in Collections:
KIST Publication > Article
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