RTA 에 따른 HB-GaAs 에서의 midgap level 들에 관한 isothermal capacitance transient spectroscopy (ICTS) 연구 : EL2(I).

Title
RTA 에 따른 HB-GaAs 에서의 midgap level 들에 관한 isothermal capacitance transient spectroscopy (ICTS) 연구 : EL2(I).
Authors
김은규조훈영한철원김춘근민석기
Keywords
RTA; HB-GaAs; ICTS; EL2
Issue Date
1987-12
Publisher
새물리
Citation
v. 27, no. 6, 674-679
URI
http://pubs.kist.re.kr/handle/201004/7932
Appears in Collections:
KIST Publication > Article
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