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dc.contributor.authorG.Y. Jeon-
dc.contributor.authorJ.S. Kim-
dc.contributor.authorC.N. Whang-
dc.contributor.authorS. Im-
dc.contributor.author송종한-
dc.contributor.authorJ.H. Song-
dc.contributor.authorW.K. Choi-
dc.contributor.authorH.K. Kim-
dc.date.accessioned2015-12-02T02:58:07Z-
dc.date.available2015-12-02T02:58:07Z-
dc.date.issued200305-
dc.identifier.citationVOL B206, 409-412-
dc.identifier.issn0168-583X-
dc.identifier.other17752-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/7942-
dc.publisherNuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms-
dc.subjectimplantation-
dc.titleFormation and characterizations of ultra-shallow p+-n junctions using B10H14 ion implantation-
dc.typeArticle-
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