HB-GaAs 에서의 deep level 과 EL2 origin 에 관한 연구 : EL2(II).

Title
HB-GaAs 에서의 deep level 과 EL2 origin 에 관한 연구 : EL2(II).
Authors
김은규조훈영박승철김용태민석기
Keywords
deep level; HB-GaAs; EL2
Issue Date
1987-12
Publisher
새물리
Citation
v. 27, no. 6, 680-685
URI
http://pubs.kist.re.kr/handle/201004/7976
Appears in Collections:
KIST Publication > Article
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