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격자 정합된 InGaAs/InGaAsP 다중 양자우물 구조의 광소자용 에피박막층과 그 제조방법

Author

변영태; 김선호; 송종한

Assignee

한국과학기술연구원

Regitration Date

2007-10-04

Registration No.

10-0766027

Application Date

2006-01-26

Application No.

10-2006-0008217

Country

KO

URI

https://pubs.kist.re.kr/handle/201004/81265

Appears in Collections:

KIST Patent > 2006

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