Low-voltage pentacene OTFTs with high-K gate dielectric and its application to AMOLED

Abstract

We recently developed room-temperature deposited pyrochlore-structure Bi1.5,Zn1.0Nb1.5O7 (BZN) insulator having the high dielectric constant (ε=50) and low leakage current. Using the high-K BZN film as a gate insulator, we fabricated pentacene OTFTs operating at low voltage. We fabricated 12 × 12 OTFT-driven OLED. We are integrating the OLED array with the low-voltage high-K pentacene OTFT.