Full metadata record

DC Field Value Language
dc.contributor.author김진상-
dc.contributor.author서상희-
dc.date.accessioned2024-01-12T08:07:22Z-
dc.date.available2024-01-12T08:07:22Z-
dc.date.issued2004-02-27-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/81728-
dc.titleCd/Hg 분위기에서 열처리에 의한 HgCdTe 접합다이오드의 패시배이션 방법-
dc.typePatent-
dc.date.registration2004-02-27-
dc.date.application2001-06-28-
dc.identifier.patentRegistrationNumber0422294-
dc.identifier.patentApplicationNumber2001-0037515-
dc.publisher.countryKO-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
Appears in Collections:
KIST Patent > 2001
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML

qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE