The development of microstructure in Si//3N//4-bonded SiC refractory.

Title
The development of microstructure in Si//3N//4-bonded SiC refractory.
Authors
최덕균이준근
Keywords
silicon carbide; high temperature properties; saggers; microstructure; silicon nitride
Issue Date
1982-01
Publisher
Journal of the Korean ceramic society; 한국요업학회지
Citation
v. 19, no. 2, 121-126
URI
http://pubs.kist.re.kr/handle/201004/8182
Appears in Collections:
KIST Publication > Article
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