Properties of center and edge delta-doped GaAs-AlGaAs quantum wells grown by MOCVD.

Title
Properties of center and edge delta-doped GaAs-AlGaAs quantum wells grown by MOCVD.
Authors
김용김무성민석기
Keywords
delta-doping; quantum well; MOCVD
Issue Date
1993-02
Publisher
Applied physics letters
Citation
v. 62, 741-?
URI
http://pubs.kist.re.kr/handle/201004/8228
Appears in Collections:
KIST Publication > Article
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