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dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author민석기-
dc.date.accessioned2015-12-02T03:00:40Z-
dc.date.available2015-12-02T03:00:40Z-
dc.date.issued199302-
dc.identifier.citationv. 62, 741-?-
dc.identifier.other3435-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/8228-
dc.publisherApplied physics letters-
dc.subjectdelta-doping-
dc.subjectquantum well-
dc.subjectMOCVD-
dc.titleProperties of center and edge delta-doped GaAs-AlGaAs quantum wells grown by MOCVD.-
dc.typeArticle-
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