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dc.contributor.author김성일-
dc.contributor.author민석기-
dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author이민석-
dc.contributor.author김영덕-
dc.date.accessioned2015-12-02T03:01:07Z-
dc.date.available2015-12-02T03:01:07Z-
dc.date.issued199301-
dc.identifier.citationv. 11, no. 2, ?-?-
dc.identifier.other3157-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/8286-
dc.publisherBull. Korean phys. soc.-
dc.subjectMOCVD-
dc.subjectGaAs-
dc.subjectAlGaAs-
dc.titleFabrication of single GaAs substrate by MOCVD.-
dc.typeArticle-
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