DSpace at KISTKIST Patent2005

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dc.contributor.author김성일-
dc.contributor.author김용태-
dc.contributor.author김인수-
dc.contributor.author김춘근-
dc.contributor.author염민수-
dc.contributor.author김영환-
dc.date.accessioned2024-01-12T10:31:38Z-
dc.date.available2024-01-12T10:31:38Z-
dc.date.issued2007-12-11-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/84514-
dc.titleAlN 열방출층 및 TiN 전극이 적용된 상변화 메모리-
dc.typePatent-
dc.date.registration2007-12-11-
dc.date.application2005-11-08-
dc.identifier.patentRegistrationNumber7,307,269-
dc.identifier.patentApplicationNumber11/270711-
dc.publisher.countryUS-
dc.type.iprs특허-
dc.contributor.assignee한국과학기술연구원-
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KIST Patent > 2005
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