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dc.contributor.author염상섭-
dc.contributor.author윤영수-
dc.contributor.authorT. W. Kim-
dc.contributor.authorW. N. Kang-
dc.contributor.authorP. H. Hur-
dc.contributor.authorC. Y. Kim-
dc.date.accessioned2015-12-02T03:02:42Z-
dc.date.available2015-12-02T03:02:42Z-
dc.date.issued199201-
dc.identifier.citationv. 5, 169-173-
dc.identifier.other2462-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/8460-
dc.publisher응용물리-
dc.publisherKorean appl. phys.-
dc.subjectthin films-
dc.subjectAl//2O//3-
dc.subjectMOCVD-
dc.titleGrowth of Al//2O//3 epitaxial films on p-Si substrates by low-pressure metalorganic chemical vapor deposition.-
dc.typeArticle-
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