Effect of cerium silicate formation on the structural and electrical properties of Pt/SrBi2Ta2O9/CeO2/Si capacitors

Abstract

We have fabricated metal/ferroelectric/insulator/semiconductor (MEFIS) capacitors of Pt/SrBi2Ta2O9(SBT)/CeO2/Si and Pt/SBT/Ce-Si-O/Si. The cerium silicate (Ce-Si-O) layer is formed by reaction between CeO2 thin film and SiO2/Si substrate at 1100°C. The SBT film on the cerium silicate layer is smoother than the SBT/CeO2. The memory window of the SBT/Ce-Si-O increases to 1.4 V at a sweep voltage of ±5 V, whereas the memory window of the SBT/CeO2 is 0.8 V at the same sweep voltage.