Stress released layers formed by pulsed ruby laser annealing on GaAs-on-Si.

Title
Stress released layers formed by pulsed ruby laser annealing on GaAs-on-Si.
Authors
김용김무성이현우김재만김현수이주천민석기
Keywords
GaAs-on-Si; laser annealing; MOCVD
Issue Date
1990-04
Publisher
Journal of applied physics
Citation
v. 67, 3358-3364
URI
http://pubs.kist.re.kr/handle/201004/8581
Appears in Collections:
KIST Publication > Article
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