DSpace at KIST: Characteristics of Amorphous Tungsten Nitride Diffusion Barrier for Metal-Organic Chemical Vapor deposited Cu Metallization

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Characteristics of Amorphous Tungsten Nitride Diffusion Barrier for Metal-Organic Chemical Vapor deposited Cu Metallization

Authors: Kim, Yong Tae

Issue Date: 1994-07-01

Citation: 1994 Int'l Electron Devices and Materials Symp, pp.0

URI: https://pubs.kist.re.kr/handle/201004/86024

Appears in Collections:: KIST Conference Paper > Others

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