Fabrication of HEMT employing delta-doping layer grown by MOCVD.

Title
Fabrication of HEMT employing delta-doping layer grown by MOCVD.
Authors
김성일민석기김용김무성엄경숙김현수
Keywords
MOCVD; GaAs; AlGaAs; HEMT; delta doping
Issue Date
1991-01
Publisher
Bull. Korean phys. soc.
Citation
v. 9, no. 1, 101-?
URI
http://pubs.kist.re.kr/handle/201004/8814
Appears in Collections:
KIST Publication > Conference Paper
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