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dc.contributor.author김성일-
dc.contributor.author민석기-
dc.contributor.author김용-
dc.contributor.author김무성-
dc.contributor.author엄경숙-
dc.contributor.author김현수-
dc.date.accessioned2015-12-02T03:06:21Z-
dc.date.available2015-12-02T03:06:21Z-
dc.date.issued199101-
dc.identifier.citationv. 9, no. 1, 101-?-
dc.identifier.other2087-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/8814-
dc.publisherBull. Korean phys. soc.-
dc.subjectMOCVD-
dc.subjectGaAs-
dc.subjectAlGaAs-
dc.subjectHEMT-
dc.subjectdelta doping-
dc.titleFabrication of HEMT employing delta-doping layer grown by MOCVD.-
dc.typeConference Paper-
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KIST Publication > Conference Paper
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