Effect of silicon orientation on the electrical properties of SiO//2 using oxygen plasma.

Title
Effect of silicon orientation on the electrical properties of SiO//2 using oxygen plasma.
Authors
오인환임태훈허정수전법주정일현
Issue Date
1996-01
Publisher
Theories and applications of chem. res.
Citation
v. 2, no. 2, 2595-?
URI
http://pubs.kist.re.kr/handle/201004/8818
Appears in Collections:
KIST Publication > Conference Paper
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