Growth temperature dependent Ge epitaxy on GaAs(100) substrate

Authors
LIM HEEJEONGShim Jae-PhilJu, GunwuKIM HANSUNGkim seong kwangSanghyeon KimKim Hyung-jun
Publisher
2.13~15, 강원도
Citation
한국반도체학술대회
Keywords
Growth temperature; Epitaxial Ge; GaAs(100) substrate; Germanium-on-insulator
URI
https://pubs.kist.re.kr/handle/201004/88290
Appears in Collections:
KIST Conference Paper > Others
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