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dc.contributor.authorKIM HANSUNG-
dc.contributor.authorShim Jae-Phil-
dc.contributor.authorJu, Gunwu-
dc.contributor.authorLIM HEEJEONG-
dc.contributor.authorkim seong kwang-
dc.contributor.authorSanghyeon Kim-
dc.contributor.authorKim Hyung-jun-
dc.date.accessioned2024-01-12T13:40:56Z-
dc.date.available2024-01-12T13:40:56Z-
dc.date.created2021-09-29-
dc.identifier.urihttps://pubs.kist.re.kr/handle/201004/88291-
dc.languageEnglish-
dc.publisher2.13~15, 강원도-
dc.subjectStrain-
dc.subjectGermanium-
dc.subjectstressor layer-
dc.subjectInAlAs-
dc.titleEpitaxial growth of strained germanium using InxAl1-xAs buffer layer-
dc.typeConference-
dc.description.journalClass2-
dc.identifier.bibliographicCitation한국반도체학술대회-
dc.citation.title한국반도체학술대회-
dc.citation.conferencePlaceKO-
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