저압 MOCVD 에 의한 GaAs 에피층의 Carbon 도핑특성 .

Title
저압 MOCVD 에 의한 GaAs 에피층의 Carbon 도핑특성 .
Authors
김용김성일민석기엄경숙김무성곽병현마동성
Keywords
저압 MOCVD; GaAs; carbon-doping
Issue Date
1992-01
Publisher
응용물리
Citation
v. 5, no. 12, 586-590
URI
http://pubs.kist.re.kr/handle/201004/8889
Appears in Collections:
KIST Publication > Article
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