Dislocation accelerated diffusion of Si in delta-doped GaAs grown on silicon substrates by MOCVD.

Title
Dislocation accelerated diffusion of Si in delta-doped GaAs grown on silicon substrates by MOCVD.
Authors
김용김무성이주천민석기
Keywords
delta-doping; MOCVD; GaAs-on-Si
Issue Date
1991-02
Publisher
Journal of applied physics
Citation
v. 69, 1355-?
URI
http://pubs.kist.re.kr/handle/201004/8891
Appears in Collections:
KIST Publication > Article
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