GaAs(100) 및 GaAs(311)A 기판위에 성장시킨 InGaAs 에피층의 격자변형에 관한 연구

Title
GaAs(100) 및 GaAs(311)A 기판위에 성장시킨 InGaAs 에피층의 격자변형에 관한 연구
Authors
손창식진현철한철구이정훈강준모김용김무성민석기김창수
Keywords
MOCVD; luttice distortion; InGaAs
Issue Date
1996-01
Publisher
응용물리; Ungyong Mulli (The Korean physical society)
Citation
VOL 9, NO 1, 67-72
URI
http://pubs.kist.re.kr/handle/201004/8950
Appears in Collections:
KIST Publication > Article
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