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dc.contributor.author한일기-
dc.contributor.authorS. H. Cho-
dc.contributor.authorP. J. S. Heim-
dc.contributor.author우덕하-
dc.contributor.author김선호-
dc.contributor.authorJ. H. Song-
dc.contributor.authorF. G. Johnson-
dc.contributor.authorM. Dagenais-
dc.date.accessioned2015-12-02T03:09:53Z-
dc.date.available2015-12-02T03:09:53Z-
dc.date.issued200003-
dc.identifier.citationVOL 12, NO 3, 251-253-
dc.identifier.issn1041-1135-
dc.identifier.other12573-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/9073-
dc.publisherIEEE Photonics Technology Letters-
dc.subjecthigh-power LD-
dc.subjectbroad-area lasers-
dc.subjectelectron leakage current-
dc.subjecthigh-power semiconductor lasers-
dc.subjectp-doping-
dc.subjectquantum-well lasers-
dc.titleDependence of the light-current characteristics of 1.55-㎛ broad-area lasers on different p-doping profiles-
dc.typeArticle-
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