Morphology variation of diamond with increasing pressure up to 400 torr during deposition using hot filament CVD
- Morphology variation of diamond with increasing pressure up to 400 torr during deposition using hot filament CVD
- 강민식; 이욱성; 백영준
- nanocrystalline diamond; Hot filament chemical vapor deposition; Pressure effect
- Issue Date
- Thin solid films
- VOL 398-399, 175-179
- The effect of the growth pressure and substrate temperature on diamond crystallite size was investigated during deposition by
hot filament chemical vapor deposition (CVD). A methane–hydrogen gas mixture was used as the precursor gas. The gas flow
rates of methane and hydrogen and the deposition time were kept constant at 4 and 100 sccm and 10 h, respectively. The growth
pressure and substrate temperature were varied between 40 and 400 torr and between 1020 and 12508C, respectively. The structure
of the films was characterized by high-resolution scanning electron microscopy (HRSEM), transmission electron microscopy
(TEM), X-ray diffraction (XRD) and micro-Raman spectroscopy. Typically, the diamond crystallite size decreased with increasing
pressure and decreasing substrate temperature. For example, with increasing growth pressure at 11008C, the structure of the film
gradually changed from microcrystalline to nanocrystalline diamond and the non-diamond defects increased. As the substrate
temperature increased at 200 torr, the structure of the film gradually changed from nanocrystalline to microcrystalline diamond.
2001 Elsevier Science B.V. All rights reserved.
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