The influence of a buried misfit dislocation network on the pyramid-to-dome transition size in Ge self-assembled quantum dots on Si(001)

Title
The influence of a buried misfit dislocation network on the pyramid-to-dome transition size in Ge self-assembled quantum dots on Si(001)
Authors
H.J.Kim장준연Y.H.Xie
Keywords
quantum dot
Issue Date
2001-06
Publisher
2001, Electronic Materials Conference in Notre Dame June 27-29
URI
http://pubs.kist.re.kr/handle/201004/9111
Appears in Collections:
KIST Publication > Conference Paper
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