Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates

Title
Control of GaAs lateral growth rate by CBr4 during metalorganic chemical vapor deposition on patterned substrates
Authors
김성일김무성김용손창식황성민민병돈김은규민석기
Keywords
MOCVD; CBr4; GaAs
Issue Date
1996-08
Publisher
Applied physics letters
Citation
VOL 69, NO 6, 815-817
URI
http://pubs.kist.re.kr/handle/201004/9273
ISSN
00036951
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE